| PART |
Description |
Maker |
| RA07H0608M RA07H0608M-E01 RA07H0608M-01 |
PTSE 12C 4#16,8#20 PIN PLUG 三菱射频MOSFET模块
PTSE 19C 19#20 SKT PLUG 三菱射频MOSFET模块
68 MHz - 88 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER 30 X 10 MM, 5.40 MM HEIGHT, H46S, 4 PIN
MITSUBISHI RF MOSFET MODULE
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| JDP4P02U |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SV308 |
Diode Silicon Epitaxial Pin Type VHF Tuner Band Switch Applications
|
TOSHIBA
|
| 1SV252 |
Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications
|
TOSHIBA
|
| MT6L61AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| MT6L61AE |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| VHB25-12S |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc.
|
| BB669 Q62702-B0839 |
ER 1C 1#16S SKT PLUG RTANG
Silicon Tuning Diode (For VHF 2-Band-hyperband-TV-tuners Very high capacitance ratio Low series resistance)
From old datasheet system
|
Siemens Group
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BB304C BB304CDW-TL-E B304CDW-TL-E |
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
Built in Biasing Circuit MOS FET IC VHF RF Amplifier
|
Renesas Electronics Corporation
|
| 2SK3475 |
Field Effect Transistor Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications
VHF-and UHF-band Amplifier Applications
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| MMBT9018G-X-AE3-R MMBT9018G-X-AN3-R MMBT9018L-X-AE |
AM/FM AMPLIFIER, LOCAL OSCILLATOR OF FM/VHF TUNER
VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR LEAD FREE PACKAGE-3
|
Unisonic Technologies Co., Ltd.
UNISONIC TECHNOLOGIES CO LTD
|
